Growth of oriented C11b MoSi2 bicrystals using a modified Czochralski technique
نویسندگان
چکیده
منابع مشابه
a study on construction of iranian life tables: the case study of modified brass logit system
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15 صفحه اولNumerical Modeling of Czochralski Silicon Crystal Growth
Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...
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For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...
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Carbon nanotubes (CNTs) have been under intense investigations during the past two decades due to their unique physical and chemical properties; however, there is still no commonly accepted growth mechanism to describe the growth behavior of CNTs. Here, we propose a nano Czochralski (CZ) model which regards the catalytic growth of a CNT as a CZ process taking place on the nano scale. The main i...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 1999
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(99)00332-2